Aluminum Nitride Wafer Substrates

 Innovacera standard aluminum nitride wafer diameters are from 50.8 mm (2 inch) to 200 mm (8 inch) ; mostly use are 6” aluminum nitride wafers and 8” AlN wafer substrates . AlN Wafers can be produced in various thicknesses from 0.125mm to 1mm with polished or lapped sides, customized sizes or request are also available.

Aluminum Nitride (AIN) materials play a important roles in the semiconductor industry, the similarities between its thermal profile and that of silicon has made an ideal choice for wafer-related semiconductor applications. Innovacera’s Aluminum nitride wafers have high reliability of Si chip and thermal heat cycling.
According to direct wafer bonding technology, polished semiconductor wafers can be bonded together without adhesives. Direct wafer bonding requires very flat and high smooth surface (Ra≤0.05um), Innovacera AlN wafers substrate can meet this requirements.

Features

• High melting point
• High electrical insulation
• Lowdielectric constant
• Higher mechanical strength
• Superior corrosion resistance against molten metal
• Thermal and chemicalstability
• High thermal conductivity (170-220w/mk)
• Similar coefficient of thermal expansion to that of silicon (si)

Properties

Properties	Unit	AN170	AN230	AN99	AN999
Color	–	Gray	Beige	Gray	Beige
Content of ALN	–	≥95%	≥96%	≥99%	≥99.9%
Bulk Density	g/cm3	≥3.30	≥3.28	≥3.26	≥3.25
Flexural Strength	MPa	≥400	≥300	≥300	≥300
Compressive Strength	MPa	2500	2000	2000	2000
Hv 500g	Gpa	10.5	9.0	9.0	9.0
Young’s Modulus	Gpa	300	300	280	280
Thermal Conductivity (@20°C)	W/m·K	≥170	≥220	~100	~90
Specific Heat	KJ/(Kg·K)	0.74	0.73	0.73	0.73
C.T.E (r.t.-400°C)	10-6/K	4.6	4.6	4.6	4.6
Volume Resistivity	Ω·cm 20°C	≥1014	≥1013	≥1010	≥1010
Dielectric Strength	KV/mm	≥16	≥15	≥15	≥15
Dielectric Constant (@1MHz)	–	8.6	8.6	8.6	8.6
Loss Tangent (@1MHz)	×10-4	5	5	5	5

AlN Wafers Specification

Properties	Unit	6″ Wafer	8″ Wafer
Material	–	AlN Ceramics	AlN Ceramics
Thermal Conductivity	W/m·K	>170	>170
Thermal Expansion Coefficient	ppm/K（300~1200K）	4-6	4-6
Sintering Aid	–	Y2O3	Y2O3
Diameter	mm	150+/-0.25	200+/-0.25
Notch Depth	mm	1.0+0.25/-0/Locating Edge	1.0+0.25/-0
Notch Angle	–	90°+5/-2°	90°+5/-2°
Thickness	μm	400±15	400±15
TTV	μm	<10	<10
BOW	μm	<±30	<±30
Warp	μm	<50	<50
Ra	nm	<50	<50

Applications

• Semiconductor manufacturing
• Microwave power amplifier
• Rf powerand switch
• High temperature power electronics
• Laser diode dispersionoptoelectronic devices
• High power and high frequency electronic devices
• MOSFET, IGBTpower modules
• Led packages for cooling and protecting circuits