Lapped and Polished Aluminum Nitride Substrates
INNOVACERA supplies ground, lapped and polished aluminum nitride (AlN) substrates for thin-film circuits, laser diode submounts, photonics and precision metallization. Thermal conductivity we provided is 170, 200 and 230 W/m·K, with master sizes up to 138 × 190 mm. For applications requiring a fine surface, precision polishing is available down to Ra ≤ 0.05 μm, with custom sizes, thickness,and slots available. AlN substrate surface finish can be selected according to the downstream process. INNOVACERA provides grinding, fine lapping, polishing and precision polishing, together with custom thicknesses, dimensions and machining features for different application requirements. Product Specification Specification Capability Material Aluminum nitride (AlN) Thermal conductivity 170 / 200 / 230 W/m·K Thickness 0.38 / 0.55 / 0.635 mm standard, others on request Thickness tolerance ±0.05 mm typical Common sizes 50.8 × 50.8, 100 × 100, 114.3 × 114.3, 120 × 120 mm, customized size is available. L...