INNOVACERA | technical ceramic solutions

  Innovacera standard aluminum nitride wafer diameters are from 50.8 mm (2 inch) to 200 mm (8 inch) ; mostly use are 6” aluminum nitride wafers and 8” AlN wafer substrates . AlN Wafers can be produced in various thicknesses from 0.125mm to 1mm with polished or lapped sides, customized sizes or request are also available. Aluminum Nitride (AIN)  materials play a important roles in the semiconductor industry, the similarities between its thermal profile and that of silicon has made an ideal choice for wafer-related semiconductor applications. Innovacera’s Aluminum nitride wafers have high reliability of Si chip and thermal heat cycling. According to direct wafer bonding technology, polished semiconductor wafers can be bonded together without adhesives. Direct wafer bonding requires very flat and high smooth surface (Ra≤0.05um), Innovacera AlN wafers substrate can meet this requirements. Features High melting point High electrical insulation Lowdielectric constant Higher mechanic...

  Aluminum Nitride Wafer Substrates are a crucial component in the semiconductor industry, known for their exceptional thermal and electrical properties. Aluminum Nitride (AIN) materials have gained prominence due to their compatibility with silicon, making them ideal for a variety of wafer-related applications. The Importance of Aluminum Nitride Wafer Substrates Aluminum Nitride Wafer Substrates  play an essential role in the semiconductor industry. One of the key reasons for their popularity is their thermal profile, which closely matches that of silicon. This similarity makes AIN substrates an excellent choice for semiconductor applications where thermal management is critical. Innovacera, a leading provider of these substrates, offers Aluminum Nitride Wafer Substrates in various diameters, ranging from 2 inches to 8 inches, with the 6-inch and 8-inch sizes being the most commonly used.   Key Features of Aluminum Nitride (AIN) Aluminum Nitride (AIN)  stands out du...

  Innovacera standard aluminum nitride wafer diameters are from 50.8 mm (2 inch) to 200 mm (8 inch) ; mostly use are 6” aluminum nitride wafers and 8” AlN wafer substrates . AlN Wafers can be produced in various thicknesses from 0.125mm to 1mm with polished or lapped sides, customized sizes or request are also available. Aluminum Nitride (AIN)  materials play a important roles in the semiconductor industry, the similarities between its thermal profile and that of silicon has made an ideal choice for wafer-related semiconductor applications. Innovacera’s Aluminum nitride wafers have high reliability of Si chip and thermal heat cycling. According to direct wafer bonding technology, polished semiconductor wafers can be bonded together without adhesives. Direct wafer bonding requires very flat and high smooth surface (Ra≤0.05um), Innovacera AlN wafers substrate can meet this requirements. Features High melting point High electrical insulation Lowdielectric constant Higher mechanic...