Hot pressing Aluminum Nitride Used For Semiconductor Fabrication Equipments

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Hot Pressing Aluminum Nitride


Hot pressing Aluminum Nitride (AlN) ceramics are used as wafer heating plates and wafer holding electrostatic chucks in semiconductor fabrication equipments.

Advantages of Hot pressing ALN Aluminum nitride ceramic:

– High purity
– Electrical insulator
– High thermal conductivity
– Critical thermal management material
– Reduced Particulate Generation
– Corrosion/Erosion Resistance
– Controlled Electrical Properties

Properties:

PropertyUnitsValue
Flexural Strength, MOR (20 °C)MPa300-460
Fracture ToughnessMPa m1/22.75-6.0
Thermal Conductivity (20 °C)W/m K100-170
Coefficient of Thermal Expansion1 x 10-6/°C3.3-5.5
Maximum Use Temperature°C800
Dielectric Strength (6.35mm)ac-kV/mm16.0-19.7
Dielectric Loss1MHz, 25 °C1 x 10-4 to 5 x 10-4
Volume Resistivity (25°C)Ω-cm1013 to 1014

Typical Application:
– Cover plates and MRI equipment(Magnetic Resonance Imaging)
– High-power detectors, plasma generators, military radios
– Electrostatic chucks and heating plates for semiconductors and integrated circuits
– Infrared and microwave window material

Hot Pressing Aluminum Nitride Wafer

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