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Hot-Pressed Aluminum Nitride

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  About Hot-Pressed Aluminum Nitride (AlN) Hot pressed aluminum nitride ceramics  are sintered by vacuum hot pressing. The aluminum nitride purity is up to 99.5%(without any sintering additives), and density after hot pressing reaches 3.3g/cm3, it also has excellent thermal conductivity and high electrical insulation. The thermal conductivity can be from 90 W/(m·k) to 210 W/(m·k). The aluminum nitride ceramic mechanical strength and hardness of the product after high temperature and high pressure are better than those of the tape casting process, dry pressing and cold isostatic press method. Hot pressed aluminum nitride ceramics have high temperature resistance and corrosion resistance, and will not be eroded by various molten metals and molten hydrochloric acid. Typical Application of Aluminum Nitride (AlN) Cooling cover and magnetic resonance imaging equipment As the substrate of high-frequency surface acoustic wave device, large-size and high-power heat dissipation in...

Hot Pressed Aluminum Nitride Ceramic

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Hot pressed aluminum nitride ceramic is used in applications requiring high electrical resistivity in addition to exceptional thermal conductivity. The applications for hot-pressed AlN typically involve rigorous or abrasive environments and high-temperature thermal cycling. Thermal Conductivity:80-100 W/M.K Typical Applications: 1.Semiconductor heaters 2.Ballistics armor

Hot pressing Aluminum Nitride Used For Semiconductor Fabrication Equipments

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Hot pressing  Aluminum Nitride (AlN) ceramics   are used as wafer heating plates and wafer holding electrostatic chucks in semiconductor fabrication equipments. Advantages of Hot pressing ALN Aluminum nitride ceramic: – High purity – Electrical insulator – High thermal conductivity – Critical thermal management material – Reduced Particulate Generation – Corrosion/Erosion Resistance – Controlled Electrical Properties Properties: Property Units Value Flexural Strength, MOR (20 °C) MPa 300-460 Fracture Toughness MPa m1/2 2.75-6.0 Thermal Conductivity (20 °C) W/m K 100-170 Coefficient of Thermal Expansion 1 x 10-6/°C 3.3-5.5 Maximum Use Temperature °C 800 Dielectric Strength (6.35mm) ac-kV/mm 16.0-19.7 Dielectric Loss 1MHz, 25 °C 1 x 10 -4  to 5 x 10 -4 Volume Resistivity (25°C) Ω-cm 10 13  to 10 14 Typical Application: – Cover plates and MRI equipment(Magnetic Resonance Imaging) – High-power detectors, plasma generators, military radios – Electrostatic chucks and heati...