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Hot Pressing (HP) Sintering Process for Ceramic Materials Applications

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  Hot pressing(HP) sintering process is the most commonly used technique for fabricating dense, non-oxide monolithic ceramics and their composites.   During hot pressing sintering, temperature and pressure are simultaneously applied to the powder compact contained in a die. Under the application of pressure, the contact points between particles develop a very high stress, increasing the local diffusion rates.     As for all forms of densification, the particle size, temperature, pressure, heating rate and holding time all influence the density and micro-structure of the hot pressed compacts whilst a controlled atmosphere is required for the Non-oxides. Carbides, borides and silicides are often hot pressed under vacuum or an inert gas such as argon whilst the nitrides are generally densified under a nitrogen atmosphere.   What are the benefits of hot pressing sintering? Hot pressing sintering is a manufacturing process that uses heat and pressure to create strong, durable parts. The pro
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TO 247 Alumina Ceramic Thermal Pads For Power Switches

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Alumina Ceramic Thermal Pads   are designed to provide a preferential heat-transfer path between heat-generating components, power switches, heat sinks, and other cooling devices.   Alumina ceramic (Al₂O₃)   thermal pads are renowned for their exceptional thermal conductivity and electrical insulation properties. Alumina ceramics exhibits thermal conductivity ranging from 20 to 30 W/m·K, allowing for efficient heat dissipation in high-power applications. This critical feature prevents overheating, enhancing the reliability and longevity of electronic components. Additionally, alumina’s high melting point and chemical stability make it suitable for harsh environments, ensuring these thermal pads maintain performance even under extreme conditions.   TO 247 alumina ceramic thermal pads typically used in the power switches, Integrated Circuit Chip, Packaging Heat Conduction, IGBT Transistor Heat Sink MOS Transistor, MOSFET Transistor Heat Sink Interface, LED Board TIM ( Thermal Interface M
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Aluminum Nitride Wafer Substrates

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  Innovacera standard aluminum nitride wafer diameters are from 50.8 mm (2 inch) to 200 mm (8 inch) ; mostly use are 6” aluminum nitride wafers and 8” AlN wafer substrates . AlN Wafers can be produced in various thicknesses from 0.125mm to 1mm with polished or lapped sides, customized sizes or request are also available. Aluminum Nitride (AIN)  materials play a important roles in the semiconductor industry, the similarities between its thermal profile and that of silicon has made an ideal choice for wafer-related semiconductor applications. Innovacera’s Aluminum nitride wafers have high reliability of Si chip and thermal heat cycling. According to direct wafer bonding technology, polished semiconductor wafers can be bonded together without adhesives. Direct wafer bonding requires very flat and high smooth surface (Ra≤0.05um), Innovacera AlN wafers substrate can meet this requirements. Features High melting point High electrical insulation Lowdielectric constant Higher mechanical streng
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