Aluminum nitride (AlN) Substrates
Innovacera’s Aluminum Nitride (AlN) Substrates deliver exceptional thermal conductivity, a thermal expansion coefficient closely matched to silicon, and excellent electrical insulation, making them an ideal choice for high-power electronic applications. With superior mechanical strength, high breakdown voltage, and outstanding thermal shock resistance, AlN substrates ensure reliable performance in demanding environments. Their precision machining capability and customizable specifications make them well-suited for IGBT power modules, high-power LEDs, and advanced heat dissipation components. Features • High thermal conductivity • Thermal expansion coefficient close to silicon wafer • High breakdown voltage Application • High power IGBT power module • High-power LED • High power heat sink Material Properties Table P roject Test conditions Unit AlN AN-170 AN-200 AN-230 Material – – AlN AlN AlN Appearance – – Light blue beige beige Surface roughness Ra μ m 0.2~0.75 0.2~0...